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8" Silicon Epitaxial Wafer

$53.00

8" Silicon Epitaxial Wafer Epitaxy is the process of depositing a thin layer on substrate, Epitaxy layer can be as the same as the basis(Si/Si) or different with the basis (SiGe/Si or SiC/S) ,Silicon epitaxy is a layer of single-crystal silicon on wafer,The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate's crystalline structure. We offer Silicon epitaxial wafer. Application: Bipolar device, Power MOSFET,IGBT,Detectors and rectifier, IC and As-doped substrate. We supply Silicon Epitaxial wafers to all customers promptly. We can adjust the specification as you need. Silicon Epitaxial Wafer Specifications

Item
Characteristics
Parameters
Test Method
1
Epitaxial Layer Dopants
Boron, Phosphorus, Arsenic
 
2
Crystal Orientation in the Epitaxial Layer
<100>, <111>
 
3
Epitaxial Layer Resistivity
Epitaxial Reactor
Diameter
Type
Epitaxial Wafer Resistivity
Uniformity
ASTM  F723  F1392
Batch
100mm
125mm
150mm
200mm
P/P++; N/N+
N/N++,N/N+/N++
N/P/P;  P/N/N+
0.004(B:0.01)-3 Ω.cm
≤±3%
3-30  Ω.cm
≤±5%
>30  Ω.cm
≤±6%
Single
150mm
200mm
P/P++;  N/N++
N/N+/N++
0.3-3  Ω.cm
≤±2%
3-30  Ω.cm
≤±3%
4
Epitaxial Layer
Thickness
Epitaxial Reactor
Diameter
Type
Epitaxial Wafer
Thickness
Uniformity
ASTM F95
Batch
100mm
125mm
150mm
200mm
P/P++;  N/N+
N/N++, N/N+/N++
N/P/P;   P/N/N+
3-100μm
≤±3%
Single Wafer
150mm
200mm
P/P++;N/N++
N/N+/N++
0.1-20μm
≤±1%
5
Stacking Faults density
≤10/cm2
ASTM F1810
6
Slip lines
≤5 lines, total length <1/2 diameter
ASTM F1725 F1726
7
Haze、Scratches、Craters、Orange Peel、Cracks、Crow's Feet、Edge Chips、Foreign Matter、Back Surface Contamination
NONE
ASTM F523
8
Crown Edge
Projection above wafer surface not to exceed 1/3 of Epitaxial layer thickness
 
9
Point Defects
SEMI Standard
ASTM F523

 


Add to Cart:

  • Model: 8-inch-Epitaxial-Wafer
  • Shipping Weight: 1.1lbs
  • 100000 Units in Stock


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