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Home :: Silicon Epitaxial Wafer :: 6" Silicon Epitaxial Wafer

Silicon Epitaxial Wafer

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6" Silicon Epitaxial Wafer

$43.00

6" Silicon Epitaxial Wafer Epitaxy is the process of depositing a thin layer on substrate, Epitaxy layer can be as the same as the basis(Si/Si) or different with the basis (SiGe/Si or SiC/S) ,Silicon epitaxy is a layer of single-crystal silicon on wafer,The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate's crystalline structure. We offer Silicon epitaxial wafer. Application: Bipolar device, Power MOSFET,IGBT,Detectors and rectifier, IC and As-doped substrate. We supply Silicon Epitaxial wafers to all customers promptly. We can adjust the specification as you need. Silicon Epitaxial Wafer Specifications

Item	Characteristics	Parameters					Test Method
1	Epitaxial Layer Dopants	Boron, Phosphorus, Arsenic
2	Crystal Orientation in the Epitaxial Layer	<100>, <111>
3	Epitaxial Layer Resistivity	Epitaxial Reactor	Diameter	Type	Epitaxial Wafer Resistivity	Uniformity	ASTM F723 F1392
		Batch	100mm 125mm 150mm 200mm	P/P⁺⁺; N/N⁺ N/N⁺⁺,N/N+/N⁺⁺ N/P/P; P/N/N⁺	0.004（B:0.01）-3 Ω.cm	≤±3%
					3-30 Ω.cm	≤±5%
					>30 Ω.cm	≤±6%
		Single	150mm 200mm	P/P⁺⁺; N/N⁺⁺ N/N⁺/N⁺⁺	0.3-3 Ω.cm	≤±2%
		Single	150mm 200mm	P/P⁺⁺; N/N⁺⁺ N/N⁺/N⁺⁺	3-30 Ω.cm	≤±3%
4	Epitaxial Layer Thickness	Epitaxial Reactor	Diameter	Type	Epitaxial Wafer Thickness	Uniformity	ASTM F95
		Batch	100mm 125mm 150mm 200mm	P/P⁺⁺; N/N⁺ N/N⁺⁺, N/N⁺/N⁺⁺ N/P/P; P/N/N⁺	3-100μm	≤±3%
		Single Wafer	150mm 200mm	P/P⁺⁺;N/N⁺⁺ N/N⁺/N⁺⁺	0.1-20μm	≤±1%
5	Stacking Faults density	≤10/cm²					ASTM F1810
6	Slip lines	≤5 lines, total length <1/2 diameter					ASTM F1725 F1726
7	Haze、Scratches、Craters、Orange Peel、Cracks、Crow's Feet、Edge Chips、Foreign Matter、Back Surface Contamination	NONE					ASTM F523
8	Crown Edge	Projection above wafer surface not to exceed 1/3 of Epitaxial layer thickness
9	Point Defects	SEMI Standard					ASTM F523